Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
3.6V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Length
5.99mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Country of Origin
China
945.60 MOP
92.19 MOP Each (In a Pack of 10) (ex VAT)
Standard
10
945.60 MOP
92.19 MOP Each (In a Pack of 10) (ex VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 75 - 149 | 92.19 MOP |
| 150+ | 90.77 MOP |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
3.6V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Length
5.99mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Country of Origin
China


