Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Number of Elements per Chip
1
Width
3.15mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
2,695.30 MOP
105.12 MOP Each (In a Pack of 25) (ex VAT)
Standard
25
2,695.30 MOP
105.12 MOP Each (In a Pack of 25) (ex VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 30 - 59 | 105.12 MOP |
| 60+ | 103.50 MOP |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
14.2 A
Maximum Drain Source Voltage
100 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
4V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Length
3.15mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Number of Elements per Chip
1
Width
3.15mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China


