Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
9.50 MOP
9.48 MOP Each (ex VAT)
Standard
1
9.50 MOP
9.48 MOP Each (ex VAT)
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 12 | 9.48 MOP |
| 13 - 24 | 9.38 MOP |
| 25+ | 9.17 MOP |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
1.8 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details



