Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
900 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
78 nC @ 10 V
Width
4.7mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
16.50 MOP
16.49 MOP Each (Supplied as a Tape) (ex VAT)
Production pack (Tape)
1
16.50 MOP
16.49 MOP Each (Supplied as a Tape) (ex VAT)
Stock information temporarily unavailable.
Production pack (Tape)
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 12 | 16.49 MOP |
| 13 - 24 | 16.08 MOP |
| 25+ | 15.77 MOP |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3.6 A
Maximum Drain Source Voltage
900 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.7 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
78 nC @ 10 V
Width
4.7mm
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details


