Vishay N-Channel MOSFET, 9.8 A, 200 V, 3-Pin TO-220FP IRFI640GPBF

Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.8 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
70 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
9.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
18.30 MOP
18.34 MOP Each (ex VAT)
Standard
1
18.30 MOP
18.34 MOP Each (ex VAT)
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 12 | 18.34 MOP |
| 13 - 24 | 17.93 MOP |
| 25+ | 17.62 MOP |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.8 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
70 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
9.8mm
Minimum Operating Temperature
-55 °C
Product details


