Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
74 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Width
5.31mm
Minimum Operating Temperature
-55 °C
Height
20.7mm
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
55.60 MOP
55.65 MOP Each (Supplied in a Bag) (ex VAT)
Production pack (Bag)
1
55.60 MOP
55.65 MOP Each (Supplied in a Bag) (ex VAT)
Stock information temporarily unavailable.
Production pack (Bag)
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 6 | 55.65 MOP |
| 7 - 12 | 54.31 MOP |
| 13+ | 53.38 MOP |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
74 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Width
5.31mm
Minimum Operating Temperature
-55 °C
Height
20.7mm
Product details


