Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
180 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
32.50 MOP
32.46 MOP Each (Supplied in a Bag) (ex VAT)
Production pack (Bag)
1
32.50 MOP
32.46 MOP Each (Supplied in a Bag) (ex VAT)
Stock information temporarily unavailable.
Production pack (Bag)
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 6 | 32.46 MOP |
| 7 - 12 | 31.64 MOP |
| 13+ | 31.12 MOP |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
180 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.87mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
140 nC @ 10 V
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details


