Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
8.4 nC @ 5 V
Width
6.29mm
Height
3.37mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
5.40 MOP
5.36 MOP Each (Supplied in a Bag) (ex VAT)
Production pack (Bag)
1
5.40 MOP
5.36 MOP Each (Supplied in a Bag) (ex VAT)
Stock information temporarily unavailable.
Production pack (Bag)
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 24 | 5.36 MOP |
| 25 - 49 | 5.26 MOP |
| 50+ | 5.15 MOP |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.7 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
200 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
8.4 nC @ 5 V
Width
6.29mm
Height
3.37mm
Minimum Operating Temperature
-55 °C
Product details


