Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
530 mA
Maximum Drain Source Voltage
150 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
203.00 MOP
39.57 MOP Each (In a Pack of 5) (ex VAT)
Standard
5
203.00 MOP
39.57 MOP Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
quantity | Unit price |
---|---|
150 - 299 | 39.57 MOP |
300+ | 39.06 MOP |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
530 mA
Maximum Drain Source Voltage
150 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Height
1.02mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details