Vishay TrenchFET Dual N-Channel MOSFET, 51.4 A, 100 V, 8-Pin PowerPAK SO-8 SiR876BDP-T1-RE3

RS Stock No.: 228-2912PBrand: VishayManufacturers Part No.: SiR876BDP-T1-RE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

51.4 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0108 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

Transistor Material

Si

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Stock information temporarily unavailable.

88.20 MOP

8.821 MOP Each (Supplied on a Reel) (ex VAT)

Vishay TrenchFET Dual N-Channel MOSFET, 51.4 A, 100 V, 8-Pin PowerPAK SO-8 SiR876BDP-T1-RE3
Select packaging type

88.20 MOP

8.821 MOP Each (Supplied on a Reel) (ex VAT)

Vishay TrenchFET Dual N-Channel MOSFET, 51.4 A, 100 V, 8-Pin PowerPAK SO-8 SiR876BDP-T1-RE3

Stock information temporarily unavailable.

Select packaging type

quantityUnit pricePer Reel
10 - 408.821 MOP88.21 MOP
50 - 908.667 MOP86.66 MOP
100 - 2408.502 MOP85.02 MOP
250 - 9908.357 MOP83.57 MOP
1000+8.203 MOP82.03 MOP

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

51.4 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0108 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more