IXYS HiperFET, Polar N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227 IXFN48N60P

RS 庫存號: 920-0767品牌: IXYS製造商零件號: IXFN48N60P
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技術文件

規格

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

625 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

38.23mm

Typical Gate Charge @ Vgs

150 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

25.42mm

Transistor Material

Si

Height

9.6mm

Minimum Operating Temperature

-55 °C

產品詳情

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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20,172.20 MOP

Each (In a Tube of 10) (不含稅)

IXYS HiperFET, Polar N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227 IXFN48N60P

10

可用的倍數 10
1020,172.20 MOP
2040,344.50 MOP
3060,516.70 MOP
4080,689.00 MOP
50100,861.20 MOP
60121,033.50 MOP
70141,205.70 MOP
80161,377.90 MOP
90181,550.20 MOP
100201,722.40 MOP
110221,894.70 MOP
120242,066.90 MOP
130262,239.20 MOP
140282,411.40 MOP
150302,583.70 MOP

20,172.20 MOP

Each (In a Tube of 10) (不含稅)

IXYS HiperFET, Polar N-Channel MOSFET, 40 A, 600 V, 4-Pin SOT-227 IXFN48N60P

暫時無法取得庫存資訊。

10

可用的倍數 10
1020,172.20 MOP
2040,344.50 MOP
3060,516.70 MOP
4080,689.00 MOP
50100,861.20 MOP
60121,033.50 MOP
70141,205.70 MOP
80161,377.90 MOP
90181,550.20 MOP
100201,722.40 MOP
110221,894.70 MOP
120242,066.90 MOP
130262,239.20 MOP
140282,411.40 MOP
150302,583.70 MOP

暫時無法取得庫存資訊。

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多

技術文件

規格

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

625 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

38.23mm

Typical Gate Charge @ Vgs

150 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

25.42mm

Transistor Material

Si

Height

9.6mm

Minimum Operating Temperature

-55 °C

產品詳情

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

醞釀。 創造。 合作

免費加入

無隱藏費用！

design-spark
design-spark
  • 下載並使用我們的 DesignSpark 軟體進行 PCB 和 3D 機械設計
  • 查看網站內容和論壇
  • 下載超過一百萬種產品的 3D 模型、原理圖和封裝
請點擊這裡了解更多