技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
原產地
China
P.O.A.
STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 1200 V, 4-Pin HiP247-4 SCT070W120G3-4
選擇包裝類型
生產包 (管子)
1
P.O.A.
STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 1200 V, 4-Pin HiP247-4 SCT070W120G3-4
暫時無法取得庫存資訊。
選擇包裝類型
生產包 (管子)
1
暫時無法取得庫存資訊。
技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
1200 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
原產地
China