Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
600V
Package Type
PowerFLAT
Series
MDmesh M5
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.8W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
62nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
0.95mm
Length
8mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
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Stock information temporarily unavailable.
274.80 MOP
54.967 MOP Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
274.80 MOP
54.967 MOP Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
5
| quantity | Unit price | Per Reel |
|---|---|---|
| 5 - 745 | 54.967 MOP | 274.83 MOP |
| 750 - 1495 | 53.586 MOP | 267.93 MOP |
| 1500+ | 52.762 MOP | 263.81 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
600V
Package Type
PowerFLAT
Series
MDmesh M5
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.8W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
62nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
0.95mm
Length
8mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
