Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
15A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
62.5W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Height
9.15mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
76.50 MOP
15.293 MOP Each (In a Pack of 5) (ex VAT)
Standard
5
76.50 MOP
15.293 MOP Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable.
Standard
5
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 10 | 15.293 MOP | 76.46 MOP |
| 15 - 20 | 14.942 MOP | 74.71 MOP |
| 25+ | 14.695 MOP | 73.48 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
15A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
62.5W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Height
9.15mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
