Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Stock information temporarily unavailable.
72.40 MOP
36.222 MOP Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
2
72.40 MOP
36.222 MOP Each (Supplied in a Tube) (ex VAT)
Stock information temporarily unavailable.
Production pack (Tube)
2
| quantity | Unit price | Per Tube |
|---|---|---|
| 2 - 4 | 36.222 MOP | 72.44 MOP |
| 6 - 8 | 35.552 MOP | 71.10 MOP |
| 10 - 18 | 34.779 MOP | 69.56 MOP |
| 20 - 28 | 34.058 MOP | 68.12 MOP |
| 30+ | 33.44 MOP | 66.88 MOP |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
4.2mΩ
Typical Gate Charge Qg @ Vgs
127nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.