Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
950V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
13nC
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product Details
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.
Stock information temporarily unavailable.
679.00 MOP
13.58 MOP Each (In a Tube of 50) (ex VAT)
50
679.00 MOP
13.58 MOP Each (In a Tube of 50) (ex VAT)
Stock information temporarily unavailable.
50
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | 13.58 MOP | 679.00 MOP |
| 100 - 150 | 13.174 MOP | 658.70 MOP |
| 200+ | 12.778 MOP | 638.91 MOP |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
9A
Maximum Drain Source Voltage Vds
950V
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
13nC
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product Details
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications Product status link requiring superior power density and high efficiency.