Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
TO-247
Maximum Continuous Forward Current If
40A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Dual
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
3
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
140A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Country of Origin
China
Product Details
The STMicroelectronics schottky silicon carbide diode available in TO-247, is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Stock information temporarily unavailable.
150.00 MOP
150.04 MOP Each (ex VAT)
Standard
1
150.00 MOP
150.04 MOP Each (ex VAT)
Stock information temporarily unavailable.
Standard
1
| quantity | Unit price |
|---|---|
| 1 - 1 | 150.04 MOP |
| 2 - 4 | 142.62 MOP |
| 5 - 9 | 135.41 MOP |
| 10 - 14 | 128.61 MOP |
| 15+ | 122.22 MOP |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
TO-247
Maximum Continuous Forward Current If
40A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Dual
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
3
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
140A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Country of Origin
China
Product Details
The STMicroelectronics schottky silicon carbide diode available in TO-247, is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.