Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
53A
Maximum Drain Source Voltage Vds
300V
Package Type
TO-263
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.04Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
95nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
4.37mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product Details
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Stock information temporarily unavailable.
44,311.50 MOP
44.312 MOP Each (On a Reel of 1000) (ex VAT)
1000
44,311.50 MOP
44.312 MOP Each (On a Reel of 1000) (ex VAT)
Stock information temporarily unavailable.
1000
| quantity | Unit price | Per Reel |
|---|---|---|
| 1000 - 4000 | 44.312 MOP | 44,311.50 MOP |
| 5000+ | 42.982 MOP | 42,982.05 MOP |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
53A
Maximum Drain Source Voltage Vds
300V
Package Type
TO-263
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.04Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
95nC
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
4.37mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product Details
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.