Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2F
Mount Type
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
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Stock information temporarily unavailable.
58,456.20 MOP
3,247.569 MOP Each (In a Tray of 18) (ex VAT)
18
58,456.20 MOP
3,247.569 MOP Each (In a Tray of 18) (ex VAT)
Stock information temporarily unavailable.
18
| quantity | Unit price | Per Tray |
|---|---|---|
| 18 - 18 | 3,247.569 MOP | 58,456.25 MOP |
| 36 - 36 | 3,150.141 MOP | 56,702.54 MOP |
| 54+ | 3,055.644 MOP | 55,001.60 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2F
Mount Type
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
