Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2U
Mount Type
Chassis
Pin Count
8
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
298nC
Minimum Operating Temperature
-40°C
Maximum Gate Source Voltage Vgs
18V
Forward Voltage Vf
2.9V
Maximum Operating Temperature
175°C
Transistor Configuration
3 Phase
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
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Stock information temporarily unavailable.
58,628.40 MOP
3,257.136 MOP Each (In a Tray of 18) (ex VAT)
18
58,628.40 MOP
3,257.136 MOP Each (In a Tray of 18) (ex VAT)
Stock information temporarily unavailable.
18
| quantity | Unit price | Per Tray |
|---|---|---|
| 18 - 18 | 3,257.136 MOP | 58,628.44 MOP |
| 36 - 36 | 3,191.991 MOP | 57,455.84 MOP |
| 54+ | 3,096.235 MOP | 55,732.22 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2U
Mount Type
Chassis
Pin Count
8
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
298nC
Minimum Operating Temperature
-40°C
Maximum Gate Source Voltage Vgs
18V
Forward Voltage Vf
2.9V
Maximum Operating Temperature
175°C
Transistor Configuration
3 Phase
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
