STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120

Name: STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120
Brand: STMicroelectronics
SKU: 9074741P
Availability: LimitedAvailability

RS Stock No.: 907-4741PBrand: STMicroelectronicsManufacturers Part No.: SCT30N120

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Technical Documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

105nC

Maximum Power Dissipation Pd

270W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3.5V

Maximum Operating Temperature

200°C

Length

15.75mm

Height

20.15mm

Standards/Approvals

Automotive Standard

Product Details

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics

Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

191.60 MOP

191.56 MOP Each (Supplied in a Tube) (ex VAT)

STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120

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Production pack (Tube)

191.60 MOP

191.56 MOP Each (Supplied in a Tube) (ex VAT)

STMicroelectronics Type N-Channel MOSFET, 45 A, 1200 V Enhancement, 3-Pin Hip-247 SCT30N120

Stock information temporarily unavailable.

Select packaging type

Production pack (Tube)

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Technical Documents

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

45A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

105nC

Maximum Power Dissipation Pd

270W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3.5V

Maximum Operating Temperature

200°C

Length

15.75mm

Height

20.15mm

Standards/Approvals

Automotive Standard

Product Details

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

Download and use our DesignSpark software for your PCB and 3D Mechanical designs
View and contribute website content and forums
Download 3D Models, Schematics and Footprints from more than a million products

Click here to find out more