Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
6.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
142nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Product Details
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
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Stock information temporarily unavailable.
15,395.70 MOP
15.396 MOP Each (On a Reel of 1000) (ex VAT)
1000
15,395.70 MOP
15.396 MOP Each (On a Reel of 1000) (ex VAT)
Stock information temporarily unavailable.
1000
| quantity | Unit price | Per Reel |
|---|---|---|
| 1000 - 4000 | 15.396 MOP | 15,395.67 MOP |
| 5000+ | 14.934 MOP | 14,933.80 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
6.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
142nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Height
4.37mm
Length
10.4mm
Standards/Approvals
No
Width
9.35mm
Automotive Standard
No
Product Details
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
