STMicroelectronics STripFET H7 Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-252
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-252
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
120W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
61nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
36,706.90 MOP
14.683 MOP Each (On a Reel of 2500) (ex VAT)
2500
36,706.90 MOP
14.683 MOP Each (On a Reel of 2500) (ex VAT)
Stock information temporarily unavailable.
2500
| quantity | Unit price | Per Reel |
|---|---|---|
| 2500 - 10000 | 14.683 MOP | 36,706.92 MOP |
| 12500+ | 14.389 MOP | 35,972.69 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-252
Series
STripFET H7
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
120W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
61nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products