Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-252
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
340mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
85W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
22nC
Maximum Operating Temperature
150°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
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Stock information temporarily unavailable.
126.80 MOP
25.35 MOP Each (In a Pack of 5) (ex VAT)
Standard
5
126.80 MOP
25.35 MOP Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable.
Standard
5
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 620 | 25.35 MOP | 126.75 MOP |
| 625 - 1245 | 24.732 MOP | 123.66 MOP |
| 1250+ | 24.34 MOP | 121.70 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-252
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
340mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
85W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
22nC
Maximum Operating Temperature
150°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
