Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
54nC
Forward Voltage Vf
1.6V
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
40W
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
16.4mm
Automotive Standard
No
Country of Origin
China
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
1,589.30 MOP
31.787 MOP Each (In a Tube of 50) (ex VAT)
50
1,589.30 MOP
31.787 MOP Each (In a Tube of 50) (ex VAT)
Stock information temporarily unavailable.
50
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | 31.787 MOP | 1,589.34 MOP |
| 100 - 150 | 31.152 MOP | 1,557.60 MOP |
| 200+ | 30.528 MOP | 1,526.38 MOP |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
54nC
Forward Voltage Vf
1.6V
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
40W
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
16.4mm
Automotive Standard
No
Country of Origin
China
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified


