Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
58A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-3PF
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
79W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Typical Gate Charge Qg @ Vgs
143nC
Maximum Gate Source Voltage Vgs
-25, +25V
Maximum Operating Temperature
150°C
Height
26.7mm
Width
5.7mm
Length
15.7mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
Korea, Republic Of
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Stock information temporarily unavailable.
132.50 MOP
132.52 MOP Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
1
132.50 MOP
132.52 MOP Each (Supplied in a Tube) (ex VAT)
Stock information temporarily unavailable.
Production pack (Tube)
1
| quantity | Unit price |
|---|---|
| 1 - 7 | 132.52 MOP |
| 8 - 14 | 129.22 MOP |
| 15+ | 127.16 MOP |
Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
58A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-3PF
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
79W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Typical Gate Charge Qg @ Vgs
143nC
Maximum Gate Source Voltage Vgs
-25, +25V
Maximum Operating Temperature
150°C
Height
26.7mm
Width
5.7mm
Length
15.7mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
Korea, Republic Of
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.