Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
10A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
375V
Maximum Power Dissipation Pd
125W
Package Type
TO-263
Mount Type
Surface
Channel Type
N
Pin Count
3
Switching Speed
8μs
Maximum Gate Emitter Voltage VGEO
12 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.8V
Minimum Operating Temperature
-65°C
Maximum Operating Temperature
175°C
Length
28.9mm
Height
4.6mm
Standards/Approvals
RoHS
Width
10.4mm
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
45.50 MOP
22.774 MOP Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
2
45.50 MOP
22.774 MOP Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
2
| quantity | Unit price | Per Reel |
|---|---|---|
| 2 - 248 | 22.774 MOP | 45.55 MOP |
| 250 - 498 | 22.207 MOP | 44.42 MOP |
| 500+ | 21.898 MOP | 43.80 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
10A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
375V
Maximum Power Dissipation Pd
125W
Package Type
TO-263
Mount Type
Surface
Channel Type
N
Pin Count
3
Switching Speed
8μs
Maximum Gate Emitter Voltage VGEO
12 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.8V
Minimum Operating Temperature
-65°C
Maximum Operating Temperature
175°C
Length
28.9mm
Height
4.6mm
Standards/Approvals
RoHS
Width
10.4mm
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
