Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
20A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
65W
Package Type
TO-263
Mount Type
Surface
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Maximum Operating Temperature
150°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
RoHS
Width
9.35mm
Series
STGx10NC60KD
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
80.70 MOP
16.138 MOP Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
80.70 MOP
16.138 MOP Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
5
| quantity | Unit price | Per Reel |
|---|---|---|
| 5 - 245 | 16.138 MOP | 80.69 MOP |
| 250 - 495 | 15.725 MOP | 78.63 MOP |
| 500+ | 15.458 MOP | 77.29 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
20A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
65W
Package Type
TO-263
Mount Type
Surface
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Maximum Operating Temperature
150°C
Height
4.6mm
Length
10.4mm
Standards/Approvals
RoHS
Width
9.35mm
Series
STGx10NC60KD
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
