Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
5A
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
75W
Package Type
TO-252
Mount Type
Surface
Channel Type
N
Pin Count
3
Switching Speed
690ns
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
6.2mm
Standards/Approvals
JEDEC JESD97, ECOPACK
Width
6.4mm
Series
H
Height
2.2mm
Automotive Standard
No
Energy Rating
12.68mJ
Country of Origin
China
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
99.90 MOP
19.971 MOP Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
99.90 MOP
19.971 MOP Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
5
| quantity | Unit price | Per Reel |
|---|---|---|
| 5 - 620 | 19.971 MOP | 99.86 MOP |
| 625 - 1245 | 19.497 MOP | 97.48 MOP |
| 1250+ | 19.167 MOP | 95.84 MOP |
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
5A
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
75W
Package Type
TO-252
Mount Type
Surface
Channel Type
N
Pin Count
3
Switching Speed
690ns
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
6.2mm
Standards/Approvals
JEDEC JESD97, ECOPACK
Width
6.4mm
Series
H
Height
2.2mm
Automotive Standard
No
Energy Rating
12.68mJ
Country of Origin
China
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
