Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
200A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
600W
Package Type
ISOTOP
Mount Type
Clamp
Channel Type
Type N
Pin Count
4
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
38.2mm
Height
12.2mm
Standards/Approvals
ECOPACK, JESD97
Series
Powermesh
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
279.50 MOP
279.47 MOP Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
1
279.50 MOP
279.47 MOP Each (Supplied in a Tube) (ex VAT)
Stock information temporarily unavailable.
Production pack (Tube)
1
| quantity | Unit price |
|---|---|
| 1 - 2 | 279.47 MOP |
| 3+ | 268.34 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
200A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
600W
Package Type
ISOTOP
Mount Type
Clamp
Channel Type
Type N
Pin Count
4
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
38.2mm
Height
12.2mm
Standards/Approvals
ECOPACK, JESD97
Series
Powermesh
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
