Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
29A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
80W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
3.8μs
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.75V
Maximum Operating Temperature
150°C
Height
10.4mm
Length
30.6mm
Standards/Approvals
RoHS
Width
4.6mm
Series
Low Drop
Energy Rating
8mJ
Automotive Standard
No
Country of Origin
China
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
165.30 MOP
16.529 MOP Each (In a Pack of 10) (ex VAT)
Standard
10
165.30 MOP
16.529 MOP Each (In a Pack of 10) (ex VAT)
Stock information temporarily unavailable.
Standard
10
| quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 10 | 16.529 MOP | 165.29 MOP |
| 20 - 20 | 16.024 MOP | 160.24 MOP |
| 30+ | 15.53 MOP | 155.30 MOP |
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Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
29A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
80W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
3.8μs
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.75V
Maximum Operating Temperature
150°C
Height
10.4mm
Length
30.6mm
Standards/Approvals
RoHS
Width
4.6mm
Series
Low Drop
Energy Rating
8mJ
Automotive Standard
No
Country of Origin
China
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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JOIN FOR FREE
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