Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
7A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Height
16.4mm
Standards/Approvals
RoHS
Series
Powermesh
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
37.20 MOP
18.601 MOP Each (In a Pack of 2) (ex VAT)
Standard
2
37.20 MOP
18.601 MOP Each (In a Pack of 2) (ex VAT)
Stock information temporarily unavailable.
Standard
2
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 12 | 18.601 MOP | 37.20 MOP |
| 14 - 24 | 18.137 MOP | 36.27 MOP |
| 26+ | 17.879 MOP | 35.76 MOP |
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Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
7A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
1.6V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Height
16.4mm
Standards/Approvals
RoHS
Series
Powermesh
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
