STMicroelectronics STGP10NC60KD, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-220, Through Hole
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
20A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Height
9.15mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
Malaysia
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
465.70 MOP
9.314 MOP Each (In a Tube of 50) (ex VAT)
50
465.70 MOP
9.314 MOP Each (In a Tube of 50) (ex VAT)
Stock information temporarily unavailable.
50
| quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | 9.314 MOP | 465.68 MOP |
| 100 - 150 | 9.128 MOP | 456.41 MOP |
| 200+ | 8.943 MOP | 447.13 MOP |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
20A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
25W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Height
9.15mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
Malaysia
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products