Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
216A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
714W
Number of Transistors
2
Package Type
ECOPACK
Configuration
Single
Mount Type
Surface
Channel Type
NPN
Pin Count
9
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
4mm
Height
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
Country of Origin
China
Product Details
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.
Stock information temporarily unavailable.
208.30 MOP
208.26 MOP Each (ex VAT)
Standard
1
208.30 MOP
208.26 MOP Each (ex VAT)
Stock information temporarily unavailable.
Standard
1
| quantity | Unit price |
|---|---|
| 1 - 9 | 208.26 MOP |
| 10 - 49 | 203.83 MOP |
| 50 - 99 | 199.92 MOP |
| 100+ | 193.94 MOP |
Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
216A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
714W
Number of Transistors
2
Package Type
ECOPACK
Configuration
Single
Mount Type
Surface
Channel Type
NPN
Pin Count
9
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
4mm
Height
5.5mm
Standards/Approvals
UL1557
Automotive Standard
AEC-Q101
Country of Origin
China
Product Details
The STMicroelectronics automotive-grade trench gate field-stop low-loss M series IGBT in an ACEPACK SMIT package. This device is an IGBT developed using an Advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.