Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
145A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
441W
Package Type
TO-247-4
Mount Type
Through Hole
Channel Type
Type N
Pin Count
4
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
175°C
Height
5.1mm
Length
15.9mm
Standards/Approvals
RoHS
Width
21.1mm
Series
STG
Automotive Standard
No
Product Details
The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.
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Stock information temporarily unavailable.
2,195.30 MOP
73.176 MOP Each (In a Tube of 30) (ex VAT)
30
2,195.30 MOP
73.176 MOP Each (In a Tube of 30) (ex VAT)
Stock information temporarily unavailable.
30
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 30 | 73.176 MOP | 2,195.27 MOP |
| 60 - 90 | 70.984 MOP | 2,129.53 MOP |
| 120+ | 68.855 MOP | 2,065.64 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
145A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
441W
Package Type
TO-247-4
Mount Type
Through Hole
Channel Type
Type N
Pin Count
4
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
175°C
Height
5.1mm
Length
15.9mm
Standards/Approvals
RoHS
Width
21.1mm
Series
STG
Automotive Standard
No
Product Details
The STMicroelectronics IGBT 650 V HB2 series represent an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast application.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
