Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
60A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
108W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
4
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Width
21.1mm
Series
STG
Length
15.9mm
Height
5.1mm
Automotive Standard
No
Product Details
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Stock information temporarily unavailable.
1,159.90 MOP
38.664 MOP Each (In a Tube of 30) (ex VAT)
30
1,159.90 MOP
38.664 MOP Each (In a Tube of 30) (ex VAT)
Stock information temporarily unavailable.
30
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 30 | 38.664 MOP | 1,159.93 MOP |
| 60 - 90 | 37.503 MOP | 1,125.10 MOP |
| 120+ | 36.377 MOP | 1,091.30 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
60A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
108W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
4
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.05V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Width
21.1mm
Series
STG
Length
15.9mm
Height
5.1mm
Automotive Standard
No
Product Details
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
