Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
95A
Maximum Drain Source Voltage Vds
80V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
6.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Maximum Power Dissipation Pd
127W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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Stock information temporarily unavailable.
41,244.00 MOP
13.748 MOP Each (On a Reel of 3000) (ex VAT)
3000
41,244.00 MOP
13.748 MOP Each (On a Reel of 3000) (ex VAT)
Stock information temporarily unavailable.
3000
| quantity | Unit price | Per Reel |
|---|---|---|
| 3000 - 3000 | 13.748 MOP | 41,244.01 MOP |
| 6000 - 6000 | 13.336 MOP | 40,006.69 MOP |
| 9000+ | 12.936 MOP | 38,806.57 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
95A
Maximum Drain Source Voltage Vds
80V
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
6.5Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Maximum Power Dissipation Pd
127W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Standards/Approvals
No
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
