Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Product Details
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Stock information temporarily unavailable.
122.60 MOP
12.263 MOP Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
10
122.60 MOP
12.263 MOP Each (Supplied in a Tube) (ex VAT)
Stock information temporarily unavailable.
Production pack (Tube)
10
| quantity | Unit price | Per Tube |
|---|---|---|
| 10 - 10 | 12.263 MOP | 122.63 MOP |
| 20 - 20 | 11.902 MOP | 119.02 MOP |
| 30+ | 11.542 MOP | 115.42 MOP |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
5.6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
12.6nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Automotive Standard
No
Product Details
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.