Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
TO-247
Maximum Continuous Forward Current If
40A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
2x Common Cathode Pair
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
3
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
140A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Country of Origin
China
Product Details
The STMicroelectronics SiC diode is available in TO-247 and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
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Stock information temporarily unavailable.
5,379.60 MOP
179.321 MOP Each (In a Tube of 30) (ex VAT)
30
5,379.60 MOP
179.321 MOP Each (In a Tube of 30) (ex VAT)
Stock information temporarily unavailable.
30
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 90 | 179.321 MOP | 5,379.62 MOP |
| 120+ | 173.942 MOP | 5,218.25 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
TO-247
Maximum Continuous Forward Current If
40A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
2x Common Cathode Pair
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
3
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
140A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Country of Origin
China
Product Details
The STMicroelectronics SiC diode is available in TO-247 and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
