Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2U
Mount Type
Chassis
Pin Count
8
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
298nC
Minimum Operating Temperature
-40°C
Forward Voltage Vf
2.9V
Maximum Operating Temperature
175°C
Transistor Configuration
3 Phase
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
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Stock information temporarily unavailable.
2,592.90 MOP
2,592.94 MOP Each (Supplied in a Tray) (ex VAT)
Production pack (Tray)
1
2,592.90 MOP
2,592.94 MOP Each (Supplied in a Tray) (ex VAT)
Stock information temporarily unavailable.
Production pack (Tray)
1
| quantity | Unit price |
|---|---|
| 1 - 1 | 2,592.94 MOP |
| 2 - 3 | 2,541.01 MOP |
| 4 - 7 | 2,464.75 MOP |
| 8 - 11 | 2,415.49 MOP |
| 12+ | 2,391.69 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2U
Mount Type
Chassis
Pin Count
8
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
298nC
Minimum Operating Temperature
-40°C
Forward Voltage Vf
2.9V
Maximum Operating Temperature
175°C
Transistor Configuration
3 Phase
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
