Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-252
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
340mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
85W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
22nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Stock information temporarily unavailable.
126.80 MOP
25.35 MOP Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
126.80 MOP
25.35 MOP Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable.
Production pack (Reel)
5
| quantity | Unit price | Per Reel |
|---|---|---|
| 5 - 620 | 25.35 MOP | 126.75 MOP |
| 625 - 1245 | 24.732 MOP | 123.66 MOP |
| 1250+ | 24.34 MOP | 121.70 MOP |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-252
Series
MDmesh M5
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
340mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
85W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
22nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.