Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
600mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
15nC
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
6.6mm
Height
2.17mm
Standards/Approvals
No
Automotive Standard
No
Product Details
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
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Stock information temporarily unavailable.
34,665.20 MOP
13.866 MOP Each (On a Reel of 2500) (ex VAT)
2500
34,665.20 MOP
13.866 MOP Each (On a Reel of 2500) (ex VAT)
Stock information temporarily unavailable.
2500
| quantity | Unit price | Per Reel |
|---|---|---|
| 2500 - 2500 | 13.866 MOP | 34,665.20 MOP |
| 5000 - 22500 | 13.45 MOP | 33,625.22 MOP |
| 25000+ | 13.047 MOP | 32,616.46 MOP |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
7A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
600mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
15nC
Maximum Power Dissipation Pd
70W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
6.6mm
Height
2.17mm
Standards/Approvals
No
Automotive Standard
No
Product Details
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
