技術文件
規格
Brand
Alliance MemoryMemory Size
1MB
Product Type
Flash Memory
Interface Type
Parallel
Package Type
PLCC
Pin Count
32
Organisation
128k x 8
Cell Type
NOR
Minimum Supply Voltage
4.5V
Maximum Supply Voltage
5.5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
85°C
Standards/Approvals
JEDEC
Number of Bits per Word
8
Supply Current
20mA
Maximum Random Access Time
55ns
Automotive Standard
No
Series
AS29CF010
Number of Words
131072 Words
原產地
Taiwan, Province Of China
產品詳情
The Alliance Memory 5.0 volt-only Flash memory is organized as 131072 bytes of 8 bits each, totalling 128KB of data divided into four sectors for flexible sector erase capability. Data is available on I/O0 to I/O7, and addresses are input on A0 to A16. It is available in a 32-pin PLCC package and is designed for in-system programming using a standard 5.0V VCC supply, with no need for an additional 12.0V VPP for write or erase operations.
暫時無法取得庫存資訊。
75.10 MOP
75.12 MOP Each (不含稅)
1
75.10 MOP
75.12 MOP Each (不含稅)
暫時無法取得庫存資訊。
1
| 數量 | 單價 |
|---|---|
| 1 - 9 | 75.12 MOP |
| 10 - 49 | 72.96 MOP |
| 50 - 99 | 70.49 MOP |
| 100+ | 68.32 MOP |
技術文件
規格
Brand
Alliance MemoryMemory Size
1MB
Product Type
Flash Memory
Interface Type
Parallel
Package Type
PLCC
Pin Count
32
Organisation
128k x 8
Cell Type
NOR
Minimum Supply Voltage
4.5V
Maximum Supply Voltage
5.5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
85°C
Standards/Approvals
JEDEC
Number of Bits per Word
8
Supply Current
20mA
Maximum Random Access Time
55ns
Automotive Standard
No
Series
AS29CF010
Number of Words
131072 Words
原產地
Taiwan, Province Of China
產品詳情
The Alliance Memory 5.0 volt-only Flash memory is organized as 131072 bytes of 8 bits each, totalling 128KB of data divided into four sectors for flexible sector erase capability. Data is available on I/O0 to I/O7, and addresses are input on A0 to A16. It is available in a 32-pin PLCC package and is designed for in-system programming using a standard 5.0V VCC supply, with no need for an additional 12.0V VPP for write or erase operations.