技術文件
規格
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-2A
Maximum Collector Emitter Voltage Vceo
-60V
Package Type
SOT-23
Mount Type
Surface
Transistor Configuration
Single
Maximum Collector Base Voltage VCBO
-60V
Maximum Power Dissipation Pd
500mW
Transistor Polarity
PNP
Minimum DC Current Gain hFE
45
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Pin Count
3
Maximum Operating Temperature
150°C
Length
3.04mm
Height
1.4mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
The device in a PNP transistor manufactured using new PB-HCD (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
暫時無法取得庫存資訊。
4,258.50 MOP
1.42 MOP Each (On a Reel of 3000) (不含稅)
3000
4,258.50 MOP
1.42 MOP Each (On a Reel of 3000) (不含稅)
暫時無法取得庫存資訊。
3000
| 數量 | 單價 | 每卷 |
|---|---|---|
| 3000 - 12000 | 1.42 MOP | 4,258.54 MOP |
| 15000+ | 1.278 MOP | 3,832.84 MOP |
技術文件
規格
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-2A
Maximum Collector Emitter Voltage Vceo
-60V
Package Type
SOT-23
Mount Type
Surface
Transistor Configuration
Single
Maximum Collector Base Voltage VCBO
-60V
Maximum Power Dissipation Pd
500mW
Transistor Polarity
PNP
Minimum DC Current Gain hFE
45
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Pin Count
3
Maximum Operating Temperature
150°C
Length
3.04mm
Height
1.4mm
Standards/Approvals
No
Automotive Standard
No
產品詳情
The device in a PNP transistor manufactured using new PB-HCD (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.