技術文件
規格
Brand
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2F
Mount Type
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
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暫時無法取得庫存資訊。
58,456.20 MOP
3,247.569 MOP Each (In a Tray of 18) (不含稅)
18
58,456.20 MOP
3,247.569 MOP Each (In a Tray of 18) (不含稅)
暫時無法取得庫存資訊。
18
| 數量 | 單價 | 每盤 |
|---|---|---|
| 18 - 18 | 3,247.569 MOP | 58,456.25 MOP |
| 36 - 36 | 3,150.141 MOP | 56,702.54 MOP |
| 54+ | 3,055.644 MOP | 55,001.60 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2F
Mount Type
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
醞釀。 創造。 合作
免費加入
無隱藏費用！
