技術文件
規格
Brand
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2F
Mount Type
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
醞釀。 創造。 合作
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無隱藏費用！
暫時無法取得庫存資訊。
2,585.20 MOP
2,585.22 MOP Each (不含稅)
標準
1
2,585.20 MOP
2,585.22 MOP Each (不含稅)
暫時無法取得庫存資訊。
標準
1
| 數量 | 單價 |
|---|---|
| 1 - 1 | 2,585.22 MOP |
| 2 - 3 | 2,533.48 MOP |
| 4 - 7 | 2,457.43 MOP |
| 8 - 11 | 2,408.28 MOP |
| 12+ | 2,384.47 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
SiC Power Module
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
1200V
Package Type
ACEPACK 2
Series
A2F
Mount Type
Chassis
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Standards/Approvals
UL
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics is designed as power module in four pack topology integrates advanced silicon carbide power MOSFET technology. The module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate.
醞釀。 創造。 合作
免費加入
無隱藏費用！
