技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N, Type P
Maximum Continuous Drain Current Id
9.7A
Maximum Drain Source Voltage Vds
650V
Series
MASTERG
Package Type
QFN-9
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Typical Gate Charge Qg @ Vgs
2nC
Maximum Operating Temperature
125°C
Length
9mm
Height
1mm
Standards/Approvals
RoHS, ECOPACK
Width
9mm
Automotive Standard
No
原產地
Thailand
產品詳情
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
醞釀。 創造。 合作
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暫時無法取得庫存資訊。
192,601.40 MOP
64.20 MOP Each (On a Reel of 3000) (不含稅)
3000
192,601.40 MOP
64.20 MOP Each (On a Reel of 3000) (不含稅)
暫時無法取得庫存資訊。
3000
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N, Type P
Maximum Continuous Drain Current Id
9.7A
Maximum Drain Source Voltage Vds
650V
Series
MASTERG
Package Type
QFN-9
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
220mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Typical Gate Charge Qg @ Vgs
2nC
Maximum Operating Temperature
125°C
Length
9mm
Height
1mm
Standards/Approvals
RoHS, ECOPACK
Width
9mm
Automotive Standard
No
原產地
Thailand
產品詳情
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
醞釀。 創造。 合作
免費加入
無隱藏費用！
