技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Dual N
Maximum Drain Source Voltage Vds
95V
Package Type
LBB
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
1Ω
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
10V
Maximum Operating Temperature
150°C
Length
28.95mm
Height
2.1mm
Standards/Approvals
2002/95/EC
Width
5.85mm
Automotive Standard
No
原產地
China
產品詳情
The STMicroelectronics 120 W LDMOS FET, designed for broadband commercial communications, TV broadcast, avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats.
暫時無法取得庫存資訊。
2,556.60 MOP
2,556.57 MOP Each (不含稅)
標準
1
2,556.60 MOP
2,556.57 MOP Each (不含稅)
暫時無法取得庫存資訊。
標準
1
| 數量 | 單價 |
|---|---|
| 1 - 9 | 2,556.57 MOP |
| 10 - 19 | 2,479.90 MOP |
| 20 - 29 | 2,405.39 MOP |
| 30+ | 2,357.37 MOP |
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Dual N
Maximum Drain Source Voltage Vds
95V
Package Type
LBB
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
1Ω
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
10V
Maximum Operating Temperature
150°C
Length
28.95mm
Height
2.1mm
Standards/Approvals
2002/95/EC
Width
5.85mm
Automotive Standard
No
原產地
China
產品詳情
The STMicroelectronics 120 W LDMOS FET, designed for broadband commercial communications, TV broadcast, avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats.