技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Product Type
SiC Power Module
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.6V
Maximum Operating Temperature
200°C
Height
15.8mm
Length
10.4mm
Standards/Approvals
No
Width
4.7mm
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
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暫時無法取得庫存資訊。
182.10 MOP
182.09 MOP Each (不含稅)
標準
1
182.10 MOP
182.09 MOP Each (不含稅)
暫時無法取得庫存資訊。
標準
1
| 數量 | 單價 |
|---|---|
| 1 - 7 | 182.09 MOP |
| 8 - 14 | 177.66 MOP |
| 15+ | 174.67 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsChannel Type
N
Product Type
SiC Power Module
Maximum Continuous Drain Current Id
16A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
153W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
3.6V
Maximum Operating Temperature
200°C
Height
15.8mm
Length
10.4mm
Standards/Approvals
No
Width
4.7mm
Automotive Standard
AEC-Q101
產品詳情
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
醞釀。 創造。 合作
免費加入
無隱藏費用！
