技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-2
Series
SiC MOSFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
203mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.8mm
Height
10.4mm
Standards/Approvals
No
Automotive Standard
No
醞釀。 創造。 合作
免費加入
無隱藏費用！
暫時無法取得庫存資訊。
126,154.20 MOP
126.154 MOP Each (On a Reel of 1000) (不含稅)
1000
126,154.20 MOP
126.154 MOP Each (On a Reel of 1000) (不含稅)
暫時無法取得庫存資訊。
1000
| 數量 | 單價 | 每卷 |
|---|---|---|
| 1000 - 4000 | 126.154 MOP | 126,154.22 MOP |
| 5000+ | 123.631 MOP | 123,631.15 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-2
Series
SiC MOSFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
203mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
45nC
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.8mm
Height
10.4mm
Standards/Approvals
No
Automotive Standard
No
醞釀。 創造。 合作
免費加入
無隱藏費用！
