技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-2
Series
SiC MOSFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
203mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Maximum Operating Temperature
175°C
Height
10.4mm
Length
15.8mm
Standards/Approvals
No
Width
4.7mm
Automotive Standard
No
產品詳情
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.
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暫時無法取得庫存資訊。
117,477.00 MOP
117.477 MOP Each (On a Reel of 1000) (不含稅)
1000
117,477.00 MOP
117.477 MOP Each (On a Reel of 1000) (不含稅)
暫時無法取得庫存資訊。
1000
| 數量 | 單價 | 每卷 |
|---|---|---|
| 1000 - 4000 | 117.477 MOP | 117,477.00 MOP |
| 5000+ | 115.127 MOP | 115,127.46 MOP |
醞釀。 創造。 合作
免費加入
無隱藏費用！
技術文件
規格
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-2
Series
SiC MOSFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
203mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Maximum Operating Temperature
175°C
Height
10.4mm
Length
15.8mm
Standards/Approvals
No
Width
4.7mm
Automotive Standard
No
產品詳情
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.
醞釀。 創造。 合作
免費加入
無隱藏費用！
